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| Semiconductor SBC558 PNP Silicon Transistor Descriptions * General purpose application * Switching application Features * High voltage : VCEO=-30V * Complementary pair with SBC548 Ordering Information Type NO. SBC558 Marking SBC558 Package Code TO-92 Outline Dimensions 3.450.1 4.50.1 2.250.1 unit : mm 4.50.1 0.40.02 2.060.1 14.00.40 1.27 Typ. 2.54 Typ. 123 1.200.1 0.38 PIN Connections 1. Collector 2. Base 3. Emitter KST-9029-000 1 SBC558 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -30 -30 -5 -100 625 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise Figure (Ta=25C) Symbol BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE* fT Cob NF Test Condition IC=-1mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IE= 0 VCE=-5V, IC=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200A, f=1KHz,Rg=2K, f=200Hz Min. Typ. Max. -30 110 -900 150 -700 -650 -15 800 4.5 10 Unit V mV mV mV nA MHz pF dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-9029-000 2 SBC558 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VBE Fig. 3 IC-VCE Fig. 4 hFE-IC Fig. 5 VCE(sat)-IC KST-9029-000 3 |
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